onsemi WPH4003
N-Channel Power MOSFET
| Part No. | WPH4003 |
|---|---|
| Datasheet | WPH4003 Download |
| Manufacturer |  onsemi |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● ON-resistance RDS (on) =8.2Ω (typ.)● Input Capacitance Ciss=850pF (typ.)
● 10V drive Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1700 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) IDc*1 IDpack*2 Limited only maximum temperature Tch=150°C Tc=25°C (Our ideal heat dissipation condition) *3 3 A 2.5 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 6 A Allowable Power Dissipation PD Tc=25°C 3.0 W 55 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 EAS 49 mJ Avalanche Current *5 IAV 3 A Note :*1 Shows chip capability *2 Package limited *3 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=10mH, IAV=3A (Fig.1) *5 L≤10mH, single pulse Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only.
