QPM0106 Datasheet 35W GaN Power Amplifier

Manufacturer: Qorvo

QPM0106 35w gan power amplifier by Qorvo - Datasheet Preview

Datasheet Details

Part number	QPM0106
Manufacturer	Qorvo
File Size	655.71 KB
Description	35W GaN Power Amplifier
Datasheet	QPM0106 Datasheet

General Description

1 -6 GHz GaN Power Amplifier Evaluation Board for QPM0106 Data Sheet Rev.

C, November 2023 | Subject to change without notice 1 of 25 www.qorvo.com QPM0106 ® 1.0 – 6.0 GHz 35 W GaN Power Amplifier Absolute Maximum Ratings Parameter Value / Range Drain Voltage (VD) 40 V Gate Voltage Range (VG) −5 V to 0 V Drain Current (ID) 5.730 A Gate Current (IG) See plot page 21 PDISS (under drive), 24V, 85 °C 112 W Input Power, 50 Ω, VD=24 V, IDQ=2044 mA, CW, 85 °C 33 dBm Input Power, 3:1 VSWR, VD=24 V, IDQ=2044 mA, CW, 85 °C 33 dBm Storage Temperature −55 to +125 °C Operation of this device outside the parameter ranges given above may cause permanent damage.

These are stress ratings

Overview

QPM0106 ® 1.0 – 6.0 GHz 35 W GaN Power Amplifier Product Overview Qorvo’s QPM0106 is a packaged, high power amplifier fabricated on Qorvo’s production 0.25 um GaN on SiC process.

The QPM0106 operates from 1.0 – 6.0 GHz and provides 45.4 dBm (35 W) of saturated output power with 22.4 dB of large signal gain and 41 % power–added efficiency.

The QPM0106 is packaged in a 10-lead 15.24 x 15.24 mm bolt-down package, with a pure copper base for superior thermal management.

Key Features

Frequency Range: 1.
6 GHz.
PSAT : 45.4 dBm (PIN = 23 dBm).
PAE: 41% (PIN = 23 dBm).
Power Gain: 22.4 dB (PIN = 23 dBm).
Small Signal Gain: 30.2 dB.
Bias: VD = 24 V, IDQ = 2044 mA.
Package Dimensions: 15.24 x 15.24 x 3.51 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details.

More Datasheets from Qorvo

Part Number	Description
QPM1021	100W GaN Power Amplifier
QPM2100	Multi-Chip T/R Module
QPM2101	Multi-Chip T/R Module
QPM2239	13 - 15.5GHz 80W GaN Power Amplifier Module