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UF3C065080B7S - SiC FET

General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Key Features

  • w On-resistance RDS(on): 85mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 69nC w Low body diode VFSD: 1.54V w Low gate charge: QG = 23nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Package creepage and clearance distance > 6.1mm w Kelvin source pin for optimized switching performance w ESD protected, HBM class 2 Part Number UF3C065080B7S Package D2PAK-7L Marking UF3C065080B7S Typical.

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650V-85mW SiC FET DATASHEET UF3C065080B7S Tab 1 7 G (1) KS (2) D (Tab) S (3-7) Rev. B, May 2023 Description This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the D2PAK-7L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.