UFB25SC12E1BC3N
Description
This Si C FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on Si C JFET is co-packaged with a Si MOSFET to produce a normally-off Si C FET device. The device’s silicon-like gate-drive characteristics allows the use of unipolar gate drives, patible with Si IGBTs, Si FETs, Si C MOSFETs or Si superjunction devices. Available in the E1B module package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, and any application requiring standard gate drive. Advanced Ag sintering die attach technology gives the module superior thermal performance.
Part Number UFB25SC12E1BC3N
Package E1B
Marking UFB25SC12E1BC3N
Features w On-resistance: RDS(on) = 35m W (typ) w Operating temperature: 150°C (max) w Excellent reverse recovery: Qrr = 244n C w Low body diode voltage: VFSD= 1.4V w Low gate charge: QG = 42.5n C w Threshold voltage VG(th): 5V (typ) allowing 0 to 15V drive...
