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UFB25SC12E1BC3N - SiC Cascode JFET

General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Key Features

  • w On-resistance: RDS(on) = 35mW (typ) w Operating temperature: 150°C (max) w Excellent reverse recovery: Qrr = 244nC w Low body diode voltage: VFSD= 1.4V w Low gate charge: QG = 42.5nC w Threshold voltage VG(th): 5V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM class C3 Typical.

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DATASHEET Silicon Carbide (SiC) Cascode JFET Module - EliteSiC, Full-Bridge Module, 1200 V, 35 mohm Rev. D, January 2025 UFB25SC12E1BC3N Description This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s silicon-like gate-drive characteristics allows the use of unipolar gate drives, compatible with Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the E1B module package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, and any application requiring standard gate drive.