PE025N03
Description
The PE025N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Key Features
- VDS =20V,ID =110A RDS(ON) <2.0 mΩ @ VGS=4.5V RDS(ON) <2.5mΩ @ VGS=2.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
