Datasheet4U Logo Datasheet4U.com

PE2305A - P-Channel Enhancement Mode Power MOSFET

General Description

The PE2305A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -20V,ID = -4.1A RDS(ON).

📥 Download Datasheet

Datasheet Details

Part number PE2305A
Manufacturer semi one
File Size 211.07 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE2305A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2305A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -4.1A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.5V PE2305A Rev. A.