PE2322A Datasheet PDF - semi one N-Channel Enhancement Mode Power MOSFET Specs

PE2322A - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The PE2322A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

VDS = 16V,ID = 6A RDS(ON) < 18mΩ @ VGS=4.5V RDS(ON) < 25mΩ @ VGS=2.5V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package D G S Schematic diagram 3D G1 2S Marking and pin Assignment.

Datasheet Details

Part number	PE2322A
Manufacturer	semi one
File Size	270.85 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE2322A Datasheet
Additional preview pages of the PE2322A datasheet.

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Full PDF Text Transcription

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PE2322A N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2322A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 16V,ID = 6A RDS(ON) < 18mΩ @ VGS=4.5V RDS(ON) < 25mΩ @ VGS=2.

Published: Dec 3, 2018 |