PE55P15K Datasheet | semi one

P-Channel Enhancement Mode Power MOSFET Description The PE55P15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =-55V,ID =-15A RDS(ON) <80mΩ @ VGS=-10V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Excellent package for good heat dissipation Application - Power switching application - Hard switched and high frequency circuits - DC-DC Converter Schematic diagram Marking and pin assignment TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device...