Part PE6018
Description N-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer semi one
Size 0.97 MB
semi one

PE6018 Overview

Description

The PE6018 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Key Features

  • VDS = 60V,ID =18A RDS(ON) < 16mΩ @ VGS=10V (Typ:11.5mΩ)
  • Special process technology for high ESD capability
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation