Datasheet Summary
N-Channel Enhancement Mode Power MOSFET
Description
The PE6018 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS = 60V,ID =18A RDS(ON) < 16mΩ @ VGS=10V
(Typ:11.5mΩ)
- Special process technology for high ESD capability
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Application
- Power switching application
- Hard switched and High frequency circuits
- Uninterruptible power supply
Schematic diagram Marking and pin...