Datasheet4U Logo Datasheet4U.com

PE6018 - N-Channel Enhancement Mode Power MOSFET

General Description

The PE6018 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 60V,ID =18A RDS(ON) < 16mΩ @ VGS=10V (Typ:11.5mΩ).
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.

📥 Download Datasheet

Datasheet Details

Part number PE6018
Manufacturer semi one
File Size 0.97 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE6018 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PE601CA MOSFET UNIKC
PE60 Power Panel 6W Potentiometer Vishay
PE600BA MOSFET UNIKC
PE600SA MOSFET UNIKC
PE6050K N-Channel Enhancement Mode Power MOSFET Semione

Other Datasheets by semi one

Part Number Description
PE6003 N-Channel Enhancement Mode Power MOSFET
PE6004 N-Channel Enhancement Mode Power MOSFET
PE6005 N-Channel Enhancement Mode Power MOSFET
PE6020K N-Channel Enhancement Mode Power MOSFET
PE60N70 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel Enhancement Mode Power MOSFET PE6018 Description The PE6018 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =18A RDS(ON) < 16mΩ @ VGS=10V (Typ:11.