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PE8910 Datasheet PDF

semi one PE8910

The PE8910 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested.
Part No. PE8910
Datasheet PE8910 Download
Manufacturer
semi one
Description N-Channel Enhancement Mode Power MOSFET
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PE8910 datasheet page 1 preview

DESCRIPTION

GENERAL FEATURES

● VDS = 30V,ID =11A RDS(ON) < 10m Ω@ V GS=10V RDS(ON) < 14m Ω@ VGS=4.5V ESD Rating: 2000V HBM
● High power and current handing capability
● Lead free product is acquired
● Surface mount package Schematic diagram Marking and pin assignment Application
●PWM application
●Load switch TSSOP-8 top view

ABSOLUTE MAXIMUM RATINGS

(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electri
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