PE9926 Datasheet | semi one

N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL Features - VDS =20V,ID =6A RDS(ON) < 28mΩ @ VGS=4.5V RDS(ON) < 38mΩ @ VGS=2.5V Schematic diagram - High density cell design for ultra low Rdson - Fully characterized Avalanche voltage and current Application - Power switching application - Hard Switched and High Frequency Circuits - Uninterruptible Power Supply Marking and pin Assignment SOP-8 top...