PED2310F Datasheet PDF - semi one N-Channel Enhancement Mode Power MOSFET Specs

PED2310F - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The PED2310F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

VDS = 20V, ID = 6A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

Datasheet Details

Part number	PED2310F
Manufacturer	semi one
File Size	599.69 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PED2310F Datasheet
Additional preview pages of the PED2310F datasheet.

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Full PDF Text Transcription

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PED2310F N-Channel Enhancement Mode Power MOSFET Description The PED2310F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V, ID = 6A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.

Published: Dec 3, 2018 |