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PED2310N - N-Channel Enhancement Mode Power MOSFET

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semi one

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PED2310N N-Channel Enhancement Mode Power MOSFET by semi one - Datasheet Preview — Datasheet preview – PED2310N

Datasheet Details

Part number	PED2310N
Manufacturer	semi one
File Size	394.96 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PED2310N Datasheet
Additional preview pages of the PED2310N datasheet.

Product details

Description

The PED2310N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 20V,ID =7A RDS(ON) < 25mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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Published: Dec 3, 2018 |