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PED6045G - N-Channel Enhancement Mode Power MOSFET

Description

The PED6045G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =60V, ID =45A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number PED6045G
Manufacturer semi one
File Size 682.43 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PED6045G Datasheet

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Full PDF Text Transcription

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N-Channel Enhancement Mode Power MOSFET Description The PED6045G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V, ID =45A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.
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