• Part: PED6045G
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: semi one
  • Size: 682.43 KB
Download PED6045G Datasheet PDF
semi one
PED6045G
Description The PED6045G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features - VDS =60V, ID =45A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application - Battery management - Motor controller and driver - PWM applications - Load switch Schematic diagram Marking and pin assignment DFN5x6-8L Absolute Maximum Ratings (TC=25℃ unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous (TC=100℃) Pulsed Drain Current (Note 1) Maximum Power Dissipation Avalanche Energy (L=0.5m H) Operating Junction and Storage Temperature Range Symbol VDS VGS ID ID(TC=100℃) IDM PD EAS TJ,TSTG Thermal Characteristic Thermal Resistance, Junction-to-Case (Note 2) RθJC Rating 60 ±20 45 32 160 60 225 -55 To...