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CID9N65E3 - GaN Enhancement-mode Power Transistor

Key Features

  • Enhancement-mode transistor - normally-OFF power switch.
  • Ultra-high switching frequency.
  • No reverse-recovery charge.
  • Low gate charge, low output charge.
  • Qualified for industrial.

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Datasheet Details

Part number CID9N65E3
Manufacturer tokmas
File Size 5.64 MB
Description GaN Enhancement-mode Power Transistor
Datasheet download datasheet CID9N65E3 Datasheet

Full PDF Text Transcription for CID9N65E3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CID9N65E3. For precise diagrams, and layout, please refer to the original PDF.

GaN Enhancement-mode Power Transistor CID9N65E3 Features • Enhancement-mode transistor - normally-OFF power switch • Ultra-high switching frequency • No reverse-recovery ...

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F power switch • Ultra-high switching frequency • No reverse-recovery charge • Low gate charge, low output charge • Qualified for industrial applications according to JEDEC standards • ESD safeguard • RoHS, Pb-free Applications • AC-DC converters • DC-DC converters • Totem pole PFC • Fast battery charging • High-density power conversion • High-efficiency power conversion • TV display Table 1 Key Performance Parameters at Tj = 25 oC Parameters VDS, max RDS(on), max QG, typ ID, Pulse QOSS @ 400 V Qrr Values 650 480 1.2 9 9.

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