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QN0103M3N - N-Channel 100V Fast Switching MOSFET

Description

The QN0103M3N is a high performance trench N-channel MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics.

It is ideally suited to support synchronous buck converter applications.

Features

  • Product Summary Advanced high cell density Trench technology Super Low Gate Charge Excellent Cdv/dt effect decline Green Device Available VDS 100V RDS(ON) max (VGS=10V) 16.6mΩ ID (TC=25 °C) 43A.

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Datasheet Details

Part number QN0103M3N
Manufacturer uPI Semiconductor
File Size 2.68 MB
Description N-Channel 100V Fast Switching MOSFET
Datasheet download datasheet QN0103M3N Datasheet

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QN0103M3N N-Channel 100V Fast Switching MOSFET General Description The QN0103M3N is a high performance trench N-channel MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics. It is ideally suited to support synchronous buck converter applications. The QN0103M3N meets RoHS and Green Product requirements while supporting full function reliability. Features Product Summary Advanced high cell density Trench technology Super Low Gate Charge Excellent Cdv/dt effect decline Green Device Available VDS 100V RDS(ON) max (VGS=10V) 16.6mΩ ID (TC=25 °C) 43A Applications Secondary Synchronous LED TV Back Light Ordering Information Order Number Package Type Pin Configuration D S SSG Top Marking QN0103M3N PRPAK3X3 QN0103M3N-DS-F0000, Jan.
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