QN0103M3N
Description
The QN0103M3N is a high performance trench N-channel MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics. It is ideally suited to support synchronous buck converter applications.
The QN0103M3N meets Ro HS and Green Product requirements while supporting full function reliability.
Features
Product Summary
Advanced high cell density Trench technology Super Low Gate Charge Excellent Cdv/dt effect decline Green Device Available
VDS 100V
RDS(ON) max
(VGS=10V)
16.6mΩ
(TC=25 °C)
43A
Applications
Secondary Synchronous LED TV Back Light
Ordering Information
Order Number
Package Type
Pin Configuration
S SSG Top Marking
QN0103M3N PRPAK3X3
QN0103M3N-DS-F0000, Jan. 2020
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Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TC=25°C ID@TC=100°C ID@TA=25°C ID@TA=70°C IDM EAS IAS PD@TC=25°C PD@TA=25°C TSTG TJ
Drain-Source Voltage...
