QN3102M6N Description
The QN3102M6N is a high performance trench N-channel MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics. It is ideally suited to support synchronous buck converter applications. The QN3102M6N meets RoHS and Green Product requirements while supporting full function reliability.
QN3102M6N Key Features
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Green Device Available