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QN3102M6N Datasheet N-channel 30v Fast Switching MOSFET

Manufacturer: uPI Semiconductor

Overview: QN3102M6N N-Channel 30V Fast Switching MOSFET General.

General Description

The QN3102M6N is a high performance trench N-channel MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics.

It is ideally suited to support synchronous buck converter applications.

The QN3102M6N meets RoHS and Green Product requirements while supporting full function reliability.

Key Features

  • Advanced high cell density Trench technology.
  • Super Low Gate Charge.
  • Green Device Available Product Summary VDS 30V RDS(ON) max (VGS=10V) 7.5mΩ ID (TC=25 °C) 61A.

QN3102M6N Distributor