QN3102M6N
Description
The QN3102M6N is a high performance trench N-channel MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics. It is ideally suited to support synchronous buck converter applications.
The QN3102M6N meets Ro HS and Green Product requirements while supporting full function reliability.
Features
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Green Device Available
Product Summary
VDS 30V
RDS(ON) max (VGS=10V)
7.5mΩ
ID (TC=25 °C)
61A
Applications
- High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
- Networking DC-DC Power System
- Load Switch
Ordering Information
Pin Configuration
SS S G
Order Number
Package Type
Top Marking
QN3102M6N PRPAK5X6
QN3102M6N-DS-F0000, Dec. 2019
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.upi-semi.
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25°C ID@TC=100°C ID@TA=25°C ID@TA=70°C
IDM EAS IAS PD@TC=25°C...
