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ZXTP25015DFH Datasheet
PNP medium power transistor

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ZXTP25015DFH
15V, SOT23, PNP medium power transistor
Summary
BVCEO > -15V
BVECO > -3V
IC(cont) = -4A
RCE(sat) = 33m
VCE(sat) < -55mV @ 1A
PD = 1.25W
Complementary part number ZXTN25015DFH
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
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Features
• High power dissipation SOT23 package
• High peak current
• Low saturation voltage
• 15V forward blocking voltage
• 3V reverse blocking voltage
Applications
• MOSFET and IGBT gate driving
• DC - DC converters
• Motor drive
• High side driver
• Load disconnect switch
Ordering information
Device
ZXTP25015DFHTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity per reel
3,000
Device marking
1A7
Issue 1 - June 2006
© Zetex Semiconductors plc 2006
1
C
B
E
E
C
B
Pinout - top view
www.zetex.com

ZXTP25015DFH Datasheet
PNP medium power transistor

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ZXTP25015DFH pdf
Download PDF File

ZXTP25015DFH
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
Continuous collector current(b)
Base current
Peak pulse current
Power dissipation at Tamb =25°C(a)
Linear derating factor
Power dissipation at Tamb =25°C(b)
Linear derating factor
Power dissipation at Tamb =25°C(d)
Linear derating factor
Power dissipation at Tamb =25°C(d)
Linear derating factor
Operating and storage temperature range
Symbol
VCBO
VCEO
VECO
VEBO
IC
IB
ICM
PD
PD
PD
PD
Tj, Tstg
Limit
-15
-15
-3
-7
-4
Unit
V
V
V
V
A
-1 A
-10 A
0.73 W
5.84 mW/°C
1.05 W
8.4 mW/°C
1.25 W
9.6 mW/°C
1.81 W
14.5
-55 to 150
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient(a)
Junction to ambient(b)
Junction to ambient(c)
Junction to ambient(d)
Symbol
RJA
RJA
RJA
RJA
Limit
171
119
100
69
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Issue 1 - June 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com

ZXTP25015DFH Datasheet
PNP medium power transistor

No Preview Available !

ZXTP25015DFH pdf
Download PDF File

Characteristics
ZXTP25015DFH
Issue 1 - June 2006
© Zetex Semiconductors plc 2006
3
www.zetex.com


ZXTP25015DFH datasheets pdf
Total : 6 Pages
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