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PSMN3R4-30PL Datasheet
MOSFET

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PSMN3R4-30PL
N-channel 30 V 3.4 mlogic level MOSFET
Rev. 01 — 2 November 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Suitable for logic level gate drive
sources
1.3 Applications
„ DC-to-DC converters
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
ID
Parameter
drain-source voltage
drain current
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Min Typ Max Unit
- - 30 V
[1] - - 100 A
Ptot
total power
Tmb = 25 °C; see Figure 2 - - 114 W
dissipation
Tj junction temperature
Static characteristics
-55 -
175 °C
RDSon
drain-source on-state VGS = 4.5 V; ID = 10 A;
resistance
Tj = 25 °C; see Figure 13
VGS = 10 V; ID = 10 A;
Tj = 25 °C; see Figure 13
Dynamic characteristics
-
[2] -
3.5 4.1 m
2.8 3.4 m
QGD
QG(tot)
gate-drain charge VGS = 4.5 V; ID = 25 A;
- 8 - nC
total gate charge
VDS = 15 V; see Figure 14;
-
31 -
nC
see Figure 15
Avalanche ruggedness
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; - - 200 mJ
drain-source
ID = 100 A; Vsup 30 V;
avalanche energy RGS = 50 ; unclamped

PSMN3R4-30PL Datasheet
MOSFET

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NXP Semiconductors
PSMN3R4-30PL
N-channel 30 V 3.4 mlogic level MOSFET
[1] Continuous current is limited by package.
[2] Measured 3 mm from package.
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain
S source
D mounting base; connected to
drain
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78 (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
PSMN3R4-30PL
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
PSMN3R4-30PL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 2 November 2010
© NXP B.V. 2010. All rights reserved.
2 of 15

PSMN3R4-30PL Datasheet
MOSFET

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PSMN3R4-30PL pdf
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NXP Semiconductors
PSMN3R4-30PL
N-channel 30 V 3.4 mlogic level MOSFET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
IDM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C;
see Figure 3
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup 30 V; RGS = 50 ; unclamped
Min
-
-
-20
[1] -
[1] -
-
-
-55
-55
[1] -
-
-
[1] Continuous current is limited by package.
Max Unit
30 V
30 V
20 V
100 A
100 A
609 A
114 W
175 °C
175 °C
100 A
609 A
200 mJ
200
ID
(A)
150
100
(1)
50
003aad359
120
Pder
(%)
80
40
03aa16
0
0 50 100 150 200
Tmb (°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN3R4-30PL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 2 November 2010
© NXP B.V. 2010. All rights reserved.
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