1N1199A Datasheet and Specifications PDF

The 1N1199A is a MEDIUM POWER SILICON RECTIFIER DIODES.

Key Specifications

Max Operating Temp200 °C
Min Operating Temp-65 °C
Part Number1N1199A Datasheet
ManufacturerInternational Rectifier
Overview . .
Part Number1N1199A Datasheet
DescriptionSilicon-Power Rectifiers
ManufacturerDiotec Semiconductor
Overview 1N 1199A ... 1N 1206A, 1N 3671, 1N 3673 PBY 271 ... PBY 277 Silicon-Power Rectifiers Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Metal case – Metallgeh. Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Peak forward surge current, 60 Hz half sine-wave Stoßstrom für eine 60 Hz Sinus-Halbwelle Rating for fusin.
Part Number1N1199A Datasheet
DescriptionMedium Power Silicon Rectifier Diodes
ManufacturerVishay
Overview 1N1...A, 1N36..A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 to 1000 V • High surge capability • Low thermal impedance RoHS COM.
* Voltage ratings from 50 to 1000 V
* High surge capability
* Low thermal impedance RoHS COMPLIANT
* High temperature rating
* Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260 DO-203AA (DO-4)
* RoHS compliant PRODUCT SUMMARY IF(AV) 12 A MAJOR RATINGS AND CHARACTE.
Part Number1N1199A Datasheet
DescriptionSilicon Standard Recovery Diode
ManufacturerAmerica Semiconductor
Overview Free Datasheet Free Datasheet . .

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