1N4116 Datasheet and Specifications PDF

The CENTRAL SEMICONDUCTOR 1N4099 series silicon Zener diode is designed for low leakage, low current, and low noise applications. MARKING: Devices shall either be marked with the prefix ‘C’ followed b.

0 8.2 8.610 250 200 1.0 6.3 29.0 40 1N4102 8.265 8.7 9.135 250 200 1.0 6.7 27.4 40 1N4103 8.645 9.1 9.555 250 200 1.0 7.0 26.2 40 1N4104 9.50 10 10.50 250 200 1.0 7.6 24.8 40 1N4105 10.45 11 11.55 250 200 0.05 8.5 21.6 40 1N4106 11.40 12 12.60 250 200 0.05 9.2 20.4 .

Power dissipation RthJL TJ,TSTG Max. Thermal Resistance (Junction to Lead) Operating Junction and Storage Temperature Range Value 500 250 Unit Conditions mW TL≤50 °C, 3/8 inch (10mm) lead lengt.

* Low Current Operation at 250µA
* Low Reverse Leakage
* Low Noise Characteristics
* Metallurgically Bonded
* High temperature soldering guaranteed: 260˚C/10 seconds
* RoHS Compliant DO-35 Mechanical Data Case: Terminals: Polarity: Weight: Hermetically sealed axial lead glass case, DO-35 package.

Silicon Zener Diode Series 1N4099 thru 1N4135, 1N4099-1 thru 1N4135-1 Features • 1N4099-1 thru 1N4135-1 Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/435 • Low Current Operation at 250 μ.

* 1N4099-1 thru 1N4135-1 Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/435
* Low Current Operation at 250 μA
* Low Reverse Leakage and Low Noise Characteristics
* Metallurgically Bonded
* Also available in DO-213 MELF style package Maximum Ratings Junction Temperature: -65°C to +175°C .

1N4099-1N4135, 1N4614-1N4627 High-reliability discrete products and engineering services since 1977 500mW LOW NOISE ZENER DIODES FEATURES  Available as “HR” (high reliability) screened per MIL-PRF.

* Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
* Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Junction and Storage Temperatures: DC Power Dissipation: Power Derating: Forwa.