1N5258B Datasheet and Specifications PDF

The 1N5258B is a Zener Diodes.

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Part Number1N5258B Datasheet
Manufactureronsemi
Overview Zener Diodes 1N5221B - 1N5252B DATA SHEET ABSOLUTE MAXIMUM RATINGS (Note 1) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit PD Power Dissipation Der. Industries, LLC, 2018 1 November, 2023
* Rev. 5 Publication Order Number: 1N5221B/D 1N5221B
* 1N5252B ELECTRICAL CHARACTERISTICS Values are at TA = 25°C unless otherwise noted. VZ (V) @ IZ (Note 2) Device Min. Typ. Max. ZZ (W) @ IZ (mA) ZZK (W) @ IZK (mA) 1N5221B 2.280 2.4 2.52 30 .
Part Number1N5258B Datasheet
DescriptionSILICON PLANAR ZENER DIODES
ManufacturerContinental Device India
Overview DC Power Dissipation Power Derating above 75ºC Operating and Storage Temperature SYMBOL PD Tstg VALUE 500 4.0 - 65 to +200 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) Forward V. The zeners with glass passivated junction in the hermetically sealed glass package with double studs, provides excellent stability, reliability and better power dissipation. ABSOLUTE MAXIMUM RATINGS DESCRIPTION DC Power Dissipation Power Derating above 75ºC Operating and Storage Temperature SYMBOL.
Part Number1N5258B Datasheet
Description500mW 5% DO-35 ZENER DIODE
ManufacturerRectron
Overview RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1N5223B THRU 1N5261B 500mW 5% DO-35 ZENER DIODE Absolute Maximun Ratings (Ta=25oC) Items Power Dissipation Power Derating (above 75 oC) Forward Voltage . E MAX ZENER IMPEDANCE Izt = 0.25mA MAXIMUM REVERSE CURRENT TEMP. COEFF. dvz Rz (ohms) 1300 1400 1600 1600 1700 1900 2000 1900 1600 1600 1600 1000 750 VR (V) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 3.0 3.5 4.0 5.6 IR (uA) 75 75 50 25 15 10 5 5 5 5 5 5 3 (%/ oC) -0.080 -0.080 -0.075 -0.070 -0.065 -0.060 .
Part Number1N5258B Datasheet
DescriptionSilicon Zener Diodes
ManufacturerMotorola Semiconductor
Overview DataSheet 4 U .com 4U.com DataSheet 4 U .com . .