1N6375 Datasheet and Specifications PDF

1N6373 - 1N6381 Series (ICTE-5 - ICTE-36, MPTE-5 - MPTE-45) 1500 Watt Peak Power Mosorb™ Zener Transient Voltage Suppressors Unidirectional* Mosorb devices are designed to protect voltage sensitive co.

Cathode Anode AXIAL LEAD CASE 41A PLASTIC L MPTE
*xx 1N 63xx YYWW L ICTE
*xx YYWW L = Assembly Location MPTE
*xx = ON Device Code ICTE
*xx = ON Device Code 1N63xx = JEDEC Device Code YY = Year WW = Work Week
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* Working Peak Reverse Voltage Range
* 5 V to 45 V Peak Power.

MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 1-800-831-4881 Email: sales@mdesemiconductor.com Web: .

* Plastic package has Underwriters Laboratory Flammability Classification 94 V-O
* Glass passivated chip junction in Molded Plastic package
* 1500W surge capability at 1ms
* Excellent clamping capability
* Low zener inpedance
* Fast response time: typically less than 1.0 ps from 0 volts to BV min.
*.

MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA. U.S.A. 92253 Tel: 760-564-8656 • Fax: 760-564-2414 ICTE5.0 to ICTE15C MPTE-5 to MPTE-45 1N6373 to 1N6381 and 1N6382 to 1N6389 GL.

* Plastic package has Underwriters Laboratory Flammability Classification 94 V-O
* Glass passivated chip junction in Molded Plastic package
* 1500W surge capability at 1ms
* Excellent clamping capability
* Low zener inpedance
* Fast response time: typically less than 1.0 ps from 0 volts to BV min.
*.

These devices are designed to protect voltage sensitive components from high voltage, high-energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fa.

* Working Peak Reverse Voltage Range - 5.0 V to 45 V
* Peak Power - 1500 Watts @ 1 ms
* ESD Rating of Class 3 (>16 KV) per Human Body Model
* Low Leakage < 5 µA Above 10 V
* Response Time is Typically < 1 ns
* Pb-Free Packages areBi-Adviarielacbtiloe*nal Functional Diagram Cathode Anode Additiona.