| Part Number | 2N2297 Datasheet |
|---|---|
| Manufacturer | Central Semiconductor |
| Overview |
VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ (µA) *ICEO **ICES ***ICEV ****ICER MIN 7.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 3.0 6.0 7.0 7.0 6.0 6.0 6.0 5.0 6.0 5.0 6.0 6.0 6.0 7.0 7.0 7.0 5.0 5.0 5.0 7.0 5.0 5.0 5.
1,000 200 200 150 150 10 5.0 5.0 5.0 10 10 10 10 10 10 10 10 10 1.5 4.5 10 10 10 10 10 10 10 10 10 10 5.0 10 10 10 10 10 10 1.0 5.0 2.0 2.0 10 10 10 10 MAX 1.20 0.25 0.25 0.25 1.50 1.50 2.00 2.00 0.50 2.00 0.40 0.30 2.00 *0.18 0.18 0.18 0.30 0.30 0.25 0.25 0.90 0.20 1.50 -1.30 0.50 0.45 0.40 0.40 0. |
2N2297 Datasheet and Specifications PDF
The 2N2297 is a SMALL SIGNAL TRANSISTORS.
| Part Number | 2N2297 Datasheet |
|---|---|
| Description | NPN SILICON TRANSISTOR |
| Manufacturer | New Jersey Semi-Conductor |
| Overview |
tPioducti, One.
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081
2N2297
NPN SILICON TRANSISTOR
TELEPHONE: (973) 376-2922
MECHANICAL DATA
CASE:
TERMINAL CONNECTIONS:
JEDEC TO-5
Lead 1 Emitter
Lead 2 .
Frequency Small Signal Current Gain
B"V™CQ,-O, BVCEO BVEBO
'CHOI | 'CBO2 1 *-. 'EBO hFEl hFEZ n_P. "FE) VC^Hc(sat)l VCE(sat)Z VK(sat) h.. Collector Capacitance Cob Input Capacitance Collector-Base Time Constant cib 'b'Cc lc=100 /iA lc=30 mA A IE-100 /.A VCB=60 V VCB=60 V, TA= + 150* C VY. |
| Part Number | 2N2297 Datasheet |
|---|---|
| Description | Silicon Planar Epitaxial Transistor |
| Manufacturer | Unknown Manufacturer |
| Overview | . . |
| Part Number | 2N2297 Datasheet |
|---|---|
| Description | AMPLIFIER TRANSISTOR |
| Manufacturer | Motorola Semiconductor |
| Overview | MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a T/ = 25°C Derate above 25°C Total Device Dissipat. . |