2N3173 Datasheet and Specifications PDF

The 2N3173 is a Silicon PNP Power Transistor.

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Part Number2N3173 Datasheet
ManufacturerInchange Semiconductor
Overview ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75V(Max)@ IC = -1A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable. CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.14A VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.14A ICEO Collector Cutoff Current VCE= -80V; IB=0 IEBO Emitter Cutoff Current VEB= -10V.
Part Number2N3173 Datasheet
DescriptionBipolar PNP Device
ManufacturerSeme LAB
Overview 2N3173 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package.. .