| Part Number | 2N3811 |
|---|---|
| Manufacturer | Microsemi |
| Overview | TECHNICAL DATA PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500/336 Devices 2N3810 2N3810L 2N3810U 2N3811 2N3811L 2N3811U Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emi. BR)EBO ICBO 60 60 5.0 10 10 Vdc Vdc Vdc ηAdc ηAdc IEBO 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N3810, 2N3810L, 2N3811, 2N3811L JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERIST. |
2N3811 Datasheet
The 2N3811 is a PNP SILICON DUAL TRANSISTOR.
| Part Number | 2N3811 |
|---|---|
| Description | SILICON DUAL PNP TRANSISTORS |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2N3811 and 2N3811A are dual silicon PNP transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case d. =100μA 0.25 V VBE(SAT) IC=100μA, IB=10μA 0.70 V VBE(SAT) IC=1.0mA, IB=100μA 0.80 V VBE(ON) VCE=5.0V, IC=100μA 0.70 V hFE VCE=5.0V, IC=1.0μA 75 hFE VCE=5.0V, IC=10μA 225 hFE VCE=5.0V, IC=100μA 300 900 hFE VCE=5.0V, IC=500μA 300 900 hFE VCE=5.0V, IC=1.0mA 300 900 hFE VCE=5.0V, IC=10. |
| Part Number | 2N3811 |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Semicoa Semiconductor |
| Overview |
Data Sheet No. 2N3811
Type 2N3811
Geometry 0220 Polarity PNP Qual Level: JAN - JANS
Features: • • • • Two electrically isolated, matched PNP transistors as one dual unit. Housed in TO-78 case. Also a.
* * * * Two electrically isolated, matched PNP transistors as one dual unit. Housed in TO-78 case. Also available in chip form using the 0220 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/336 which Semicoa meets in all cases. Generic Part Number: 2N3810 REF: MIL-PRF-19500/336 . |
| Part Number | 2N3811 |
|---|---|
| Description | PNP Silicon Dual Amplifier Transistor |
| Manufacturer | NES |
| Overview | . . |