2N3878 Datasheet and Specifications PDF

The 2N3878 is a NPN Transistor.

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Part Number2N3878 Datasheet
ManufacturerMicrosemi
Overview ISCFdÈ 3 3 text/html About keyword search: News Contact Employment Site part number search: Home 2N3878 (#23150) RFQ/Sample NPN Transistor Division Lawrence Mil -Spec (none) Shipping (non. E| PoE ICs Copyright © 2007 Microsemi Corporation. All rights reserved .
Part Number2N3878 Datasheet
DescriptionPower Transistors
ManufacturerRCA
Overview File No. 766 _________________________________ OOOBLJD Solid State Division Power Transistors 2N3878 2N5202 2N3879 2N6500 40375 2N3878 2N3879 2N5202 2N6500 t~.~'~ lHigh-Speed, Epitaxial-Collector. a Maximum-area-of-operation curves for de and pulse operation a Rated for safe operation in both forward- and reverse-bias conditions " High sustaining voltage a Total saturated transition time less than 1 p.s for 2N3879, 2N5202, and 2N6500 RCA-2N3878, 2N3879, 2N5202, and 2N6500o are epitaxial sil.
Part Number2N3878 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Desi. ning Voltage IC=200mA; IB= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(ON) Base-Emitter On Voltage IC=4A;VCE= 2V hFE-1* DC Current Gain IC= 0.5A; VCE= 2V hFE-2* DC Current Gain IC= 4A; VCE= 2V hFE-3* DC Current Gain I.