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2N4298 Datasheet

The 2N4298 is a NPN SILICON POWER TRANSISTOR. Download the datasheet PDF and view key features and specifications below.

Part Number2N4298
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR 2N4296, 2N4298, and 2N4299 devices are silicon NPN power transistors designed for power amplifier and switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM . 1.5 - 1.5 VBE(ON) VCE=10V, IC=100mA - 0.9 - 0.9 hFE VCE=10V, IC=5.0mA 35 - 20 - hFE VCE=10V, IC=50mA 50 150 25 75 hFE VCE=10V, IC=100mA 35 - 20 - fT VCE=10V, IC=20mA, f=5.0MHz 20 - 20 - Ccb VCB=100V, IC=0, f=0.1 to 1.0MHz - 6.0 - 6.0 ton VCC=100V, IC=100mA, IB1=IB2=10mA - 7..
Part Number2N4298
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Desi. VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=50mA; IB= 0 ICBO Collector Cutoff Current VCE=500V;IB= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 VCE(sat)* Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA VBE(sat)* Base-Emitter Saturation Voltage IC=50mA; IB= 5mA VBE(ON)* Base.