2N5229 Datasheet
2N5229 Datasheet (Motorola Semiconductor)
Motorola Semiconductor
MAXIMUM RATINGS Rating Emitter-Collector Voltage Collector-Base Voltage Emitter-Base Voltage — Collector Current Continuous Total Device Dissipation @ Ta = 25°C Derate above 25°C Total Device Dissipat.
c, l£ = 0) Emitter Cutoff Current (V EB = 12 Vdc, lc = 0) (V EB = 25 Vdc, lc = 0) (V EB = 40 Vdc, lc = 0) ON CHARACTERISTICS DC Current Gain (lC = 100 A*Adc, VCE = 1.0 Vdc) (lC = 200 ^Adc, Vc E = 0.5 Vdc) (Inverted Connection) Offset Voltage B
2N5229 Datasheet (Unknown Manufacturer)
Unknown Manufacturer
2N5229 (SILICON) 2N5230 2N5231 PNP SI LICON ANNULAR TRANSISTORS · •. designed for low·level, chopper applications requiring high speed operation. This series of devices offers excellent characteristic.
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