2N5547 Datasheet and Specifications PDF

The 2N5545 thru 2N5547 series of monolithic dual JFETs is designed for low to medium frequency differential amplifiers requiring matched gate-source voltage, high common-mode rejection, and low output.

12) 01 1 S1 01 2 D1 3 G1 5 S2 6 D2 7 G2 Electrical Characteristics (25'c unless otherwise noted) PARAMETER Gate Reverse Current CONDITIONS V G S- 30V,V DS -0 BVGSS v GS(off) Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate Operating Current 9fs 9os Cj ss Saturation .

The 2N5545/5546/5547JANTX/JANTXV are monolithic dual n-channel JFETs designed to provide high input impedance (IG < 50 pA) for general-pur.

D Monolithic Design D High Slew Rate D Low Offset/Drift Voltage D Low Gate Leakage: 3 pA D Low Noise D High CMRR: 100 dB BENEFITS D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Volta.

2N5545, 2N5546, 2N5547 Monolithic Dual N Channel JFET Features • Available in JAN, JANTX and JANTXV per MIL-PRF-19500/430 • Monolithic Design • Low Offset/Drift Voltage • Low Noise, Low Gate Leakage •.

* Available in JAN, JANTX and JANTXV per MIL-PRF-19500/430
* Monolithic Design
* Low Offset/Drift Voltage
* Low Noise, Low Gate Leakage
* Ideal for Hi-Rel High Speed, Temp-Compensated, Single-Ended Input Amps
* High-Speed Comparators
* TO-71 package Electrical Characteristics (TA = 25oC unless other.

The 2N5545/5546/5547JANTX/JANTXV are monolithic dual n-channel JFETs designed to provide high input impedance (IG < 50 pA) for general-purpose differential am.

D Monolithic Design D High Slew Rate D Low Offset/Drift Voltage D Low Gate Leakage: 3 pA D Low Noise D High CMRR: 100 dB Benefits Applications D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal L.