| Part Number | 2N5745 Datasheet |
|---|---|
| Manufacturer | Microsemi |
| Overview | TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/433 Devices 2N4399 2N5745 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Vo. t VCE = 60 Vdc VCE = 80 Vdc Collector-Emitter Cutoff Current VCE = 60 Vdc, VBE = 1.5 Vdc VCE = 80 Vdc, VBE = 1.5 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc 2N4399 2N5745 2N4399 2N5745 2N4399 2N5745 V(BR)CEO 60 80 100 100 5.0 5.0 5.0 Vdc ICEO µAdc ICEX IEBO µAdc µAdc 6 Lake Street, Lawrence, . |
2N5745 Datasheet and Specifications PDF
The 2N5745 is a PNP HIGH POWER SILICON TRANSISTOR.
| Part Number | 2N5745 Datasheet |
|---|---|
| Description | PNP Silicon High-Power Transistors |
| Manufacturer | onsemi |
| Overview | ON Semiconductort PNP Silicon High-Power Transistors . . . designed for use in power amplifier and switching circuits. • Low Collector–Emitter Saturation Voltage — IC = 15 Adc, VCE(sat) = 1.0 Vdc . . |
| Part Number | 2N5745 Datasheet |
|---|---|
| Description | Silicon Power Transistors |
| Manufacturer | Comset Semiconductor |
| Overview |
PNP 2N4398 – 2N4399 – 2N5745
SILICON POWER TRANSISTORS
They are PNP transistors mounted in Jedec TO-3 package. They are intended for use in power amplifier and switching circuits applications. Comple.
2N4399 * 2N5745 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(BR) Ratings Test Condition(s) 2N4398 2N4399 2N5745 VCB = -40 V, IE = 0 2N4398 VCB = -60 V, IE = 0 2N4399 VCB = -80 V, IE = 0 2N5745 2N4398 VCE= -40 V, IB = 0 VCE= -60 V, IB = 0 2N4399 VCE= -80 V, IB = 0 2N5745 2. |
| Part Number | 2N5745 Datasheet |
|---|---|
| Description | Silicon PNP Power Transistors |
| Manufacturer | Inchange Semiconductor |
| Overview | ¡¤ With TO-3 package ¡¤ Complement to type 2N5301/5302/5303 ¡¤ Low collector saturation voltage ¡¤ Excellent safe operating area APPLICATIONS ¡¤ For use in power amplifier and switching circuits appli. /W Datasheet pdf - Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER 2N4398 VCEO(SUS) Collector-emitter sustaining voltage 2N4399 2N5745 VCEsat-1 Collector-emitter saturation volt. |