Part Number	2N5822 Datasheet
Manufacturer	Central Semiconductor
Overview	The CENTRAL SEMICONDUCTOR 2N5822 and 2N5823 are epoxy molded complementary silicon small signal transistors manufactured by the epitaxial planar process designed for general purpose amplifier applica. BO VEB=5.0V BVCES IC=10μA 70 BVCEO IC=10mA 60 BVEBO IE=10μA 5.0 VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=500mA, IB=50mA VBE(ON) VCE=2.0V, IC=500mA 0.6 hFE VCE=2.0V, IC=2.0mA 100 hFE VCE=2.0V, IC=500mA 25 fT VCE=2.0V, IC=50mA, f=20MHz 120 Cob VCB=10V, IC=0, f=1.0MHz Cib VEB=.