| Part Number | 2N5951 Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
2N5951 — N-Channel RF Amplifier
September 2007
2N5951 N-Channel RF Amplifier
• This device is designed primarily for electronic switching applications such as low on resistance analog switching. • So.
lue
30 -30 10 -55 ~ 150
Max.
350 2.8 125 357
Units
V V mA °C
Units
mW mW/°C °C/W °C/W
© 2007 Fairchild Semiconductor Corporation 2N5951 Rev. 1.0.0
1
2N5951 * N-Channel RF Amplifier Electrical Characteristics* Ta=25°C unless otherwise noted Symbol Parameter Test Conditi. |
2N5951 Datasheet and Specifications PDF
The 2N5951 is a N-Channel RF Amplifier.
Key Specifications
| Pins | 3 |
|---|---|
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | 2N5951 Datasheet |
|---|---|
| Description | SILICON N-CHANNEL JFETS |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2N5949 Series devices are silicon N-Channel JFETs designed for switching, RF amplifier and mixer applications where low capacitance is desired. MARKING: FULL PART NUMBER TO. .5 3.5 6.5 yos VDS=15V, VGS=0, f=1.0kHz - 75 - 75 Ciss VDS=15V, VGS=0, f=1.0MHz - 6.0 - 6.0 Crss VDS=15V, VGS=0, f=1.0MHz - 2.0 - 2.0 rds(on) VGS=0, ID=0, f=1.0kHz - 200 - 250 gis VDS=15V, VGS=0, f=100MHz - 250 - 250 gfs VDS=15V, VGS=0, f=100MHz 3.0 7.5 3.0 6.5 gos VDS=15V, . |
| Part Number | 2N5951 Datasheet |
|---|---|
| Description | N-Channel JFET |
| Manufacturer | National Semiconductor |
| Overview | The 2N5949 thru 2N5953 series of N-channel JFETs is characterized for low frequency to VHF amplifiers requiring tightly specified IqSS ranges. Absolute Maximum Ratings (25°o Reverse Gate-Drain or Ga. 0'C Gate-Source Cutoff Voltage Gate Source Voltage V D s - 15V, Id = 100 ii V DS - 15V mA Dl = 1.2 In- 1 mA lO -0.7 mA mA Di = 0.4 In = 0-25 mA Saturation Drain _ Current V D S= 1BV, VQS" 0, (Note 1) Drain-Source ON Resistance vgs-o, di = o f- 1 kHz Common-Source Forward Transconductance C. |