2N5961 Datasheet and Specifications PDF

The 2N5961 is a NPN General Purpose Amplifier.

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Part Number2N5961 Datasheet
ManufacturerFairchild Semiconductor
Overview 2N5961 Discrete POWER & Signal Technologies 2N5961 C BE TO-92 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collecto. acteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N5961 625 5.0 83.3 200 Units mW mW/ °C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 2N5961 NPN General Purpose Amplifier (continued) Electrical Charac.
Part Number2N5961 Datasheet
DescriptionNPN SILICON TRANSISTOR
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR 2N5961 series devices are epoxy molded silicon NPN transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain (hFE) a. - BVEBO IE=10μA 7.0 - 7.0 - VCE(SAT) IC=10mA, IB=0.5mA, PW=300μs - 0.2 - 0.2 VBE(ON) VCE=5.0V, IC=1.0mA 0.5 0.7 0.5 0.7 hFE VCE=5.0V, IC=10μA 100 - 450 - hFE VCE=5.0V, IC=100μA 120 - 500 - hFE VCE=5.0V, IC=1.0mA 135 - 550 - hFE VCE=5.0V, IC=10mA 150 700 600 1.4K hfe VCE.