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2N6033 Datasheet

The 2N6033 is a Bipolar NPN Device. Download the datasheet PDF and view key features and specifications below.

Part Number2N6033
ManufacturerSeme LAB
Overview 2N6033 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. ons without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sal.
Part Number2N6033
DescriptionNPN POWER SILICON TRANSISTOR
ManufacturerMicrosemi
Overview NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/528 Devices 2N6032 2N6033 TECHNICAL DATA Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6032 2N6033 Collector-Emitter Vol. rent VCB = 120 Vdc 2N6032 ICBO VCB = 150 Vdc Collector-Emitter Cutoff Current 2N6033 VCE = 110 Vdc, VBE =-1.5 Vdc 2N6032 ICEX VCE = 135 Vdc, VBE =-1.5 Vdc 2N6033 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Units Vdc Vdc Adc Vdc Adc W 0C Unit 0.
Part Number2N6033
DescriptionNPN High Power Silicon Transistor
ManufacturerVPT Components
Overview 2N6032, 2N6033 NPN High Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/528 • TO-3 (TO-204AA) Package • Ideal for High Speed Switching and Linear Amplifier Appl.
* Available in JAN, JANTX, JANTXV per MIL-PRF-19500/528
* TO-3 (TO-204AA) Package
* Ideal for High Speed Switching and Linear Amplifier Applications Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Rev. V2 Max. IC = 200 mA dc; f = 30-60.
Part Number2N6033
DescriptionSilicon NPN Power Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching application. Emitter-Base Cutoff Current VEB= 7V VCE(sat) Collector-Emitter Saturation Voltage IC= 40A; IB= 4A VBE(sat) Base-Emitter Saturation Voltage IC= 40A; IB= 4A hFE DC Current Gain IC= 40A; VCE= 2V 2N6033 MIN TYP. MAX UNIT 120 V 25 mA 10 mA 10 mA 1.0 V 2.0 V 10 50 NOTICE： ISC res.