2N6035 Datasheet

The 2N6035 is a Plastic Darlington Complementary Silicon Power Transistors. Download the datasheet PDF and view key features and specifications below.

Part Number	2N6035
Manufacturer	onsemi
Overview	(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon Power Transistors Plastic Darlington complementary silicon power transistors are design. http://onsemi.com * ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V 4.0 AMPERES DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 40, 60, 80 VOLTS, 40 WATTS * Epoxy Meets UL 94 V 0 @ 0.125 in Pb Free Packages are Available MAXIMUM RATINGS Rating Collector *Emitter Voltag.

Part Number

2N6035

Description

(2N6034 - 2N6036) Silicon Power Transistor

Manufacturer

SavantIC

Overview

·With TO-126 package ·Complement to type 2N6037/6038/6039 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications PINNING(see Fig.2). ilicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6034 VCEO(SUS) Collector-emitter sustaining voltage 2N6035 2N6036 VCEsat-1 VCEsat-2 VBEsat VBE ICEO ICEX ICBO IEBO hFE-1 hFE-2 hFE-3 COB Collector-emitter saturation voltage Collector-emitter saturation voltage.

Part Number

2N6035

Description

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

Manufacturer

Central Semiconductor

Overview

The CENTRAL SEMICONDUCTOR 2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and . ess otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICEV VCE=Rated VCEO, VBE=1.5V ICEV VCE=Rated VCEO, VBE=1.5V, TC=125°C ICEO VCE=Rated VCEO IEBO VEB=5.0V BVCEO IC=100mA (2N6034, 2N6037) 40 BVCEO IC=100mA (2N6035, 2N6038) 60 BVCEO IC=100mA (2N6036, 2N6039) 80 V.