2N6053 Datasheet

The 2N6053 is a Bipolar PNP Device.

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Part Number2N6053
ManufacturerSeme LAB
Overview 2N6053 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552.
Part Number2N6053
DescriptionCOMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
ManufacturerCentral Semiconductor
Overview 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 . .
Part Number2N6053
Description(2N6053 / 2N6054) Silicon Power Transistor
ManufacturerSavantIC
Overview ·With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6055;2N6056 APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications PINNING (See Fi. om Product Specification Silicon PNP Power Transistors 2N6053 2N6054 CHARACTERISTICS Tm=25 unless otherwise specified PARAMETER 2N6053 IC=-0.1 A ;IB=0 2N6054 IC=-4A ;IB=-16mA IC=-8A ;IB=-80mA IC=-8A ;IB=-80mA IC=-4A ; VCE=-3V 2N6053 ICEO Collector cut-off current 2N6054 2N6053 ICEX Collector cut.
Part Number2N6053
DescriptionPOWER COMPLEMENTARY Silicon TRANSISTORS
ManufacturerComset Semiconductors
Overview PNP 2N6053 POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6053 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use i. rrent Test Condition(s) VCE= VCEX =-60 V, VBE=1.5 V VCE= VCEX =-60 V, VBE=1.5 V TC=150°C 2N6053 2N6053 2N6053 2N6053 2N6053 Min -60 Typ - MAx Unit -500 -5 -0.5 -2.0 µA mA mA mA V ICEX ICEO IEBO VCEO(SUS) Collector Cutoff VCE=-30 Vdc, IB=0 Current Emitter Cutoff VEB=-5 V Current Collector-Emitt.