| Part Number | 2N6101 Datasheet |
|---|---|
| Manufacturer | RCA |
| Overview |
File No. 485
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Solid State Division
Power Transistors
2N6098 2N6099 2N6100 2N6101 2N6102 2N6103
JEDEC TD-220AA
2N6099
2N6101 2N6103
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JEDEC TO-220AB
High-Current, Silicon N-P-N VER.
* Low saturation voltage VCE(satl = 1 V max. at Ic = 4 A (2N6098, 2N6099) = =1 V max. at IC 5 A (2N6100. 2N6101) = =1 V max_ at IC 8 A (2N6102, 2N6103) a VERSAWATT package (molded-silicone plastic) a Maximum safe-area-of-operation curves * Thermal-cvcle rating curve These RCA types are hometaxial-. |
2N6101 Datasheet and Specifications PDF
The 2N6101 is a Power Transistors.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | 2N6101 Datasheet |
|---|---|
| Description | Silicon Power Transistor |
| Manufacturer | SavantIC |
| Overview | ·With TO-220 package ·High current capability APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emit. cified PARAMETER 2N6098 2N6099 2N6098 2N6099 2N6100 2N6101 SYMBOL CONDITIONS MIN 70 70 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 2N6100 2N6101 80 80 IC=5A;IB=0.5A IC=10A;IB=2.5A IC=4A ; VCE=4V 1.3 2N6100/6101 IC=5A ; VCE=4V VCB=Rated VCBO;IE=0 TC=150 VEB=8V. |
| Part Number | 2N6101 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·DC Current Gain - : hFE = 20-80@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A VBE(on) Base-Emitter On Voltage ICEX Collector C. |