2N6102 Datasheet and Specifications PDF

The 2N6102 is a NPN Transistor.

Key Specifications

Max Operating Temp150 °C
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Part Number2N6102 Datasheet
ManufacturerInchange Semiconductor
Overview ·DC Current Gain - : hFE = 20-80@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . c Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 16A; IB= 3.2A VBE(on) Base-Emitter On Voltage ICEX Collect.
Part Number2N6102 Datasheet
DescriptionPower Transistors
ManufacturerRCA
Overview File No. 485 DUCrBLJD Solid State Division Power Transistors 2N6098 2N6099 2N6100 2N6101 2N6102 2N6103 JEDEC TD-220AA 2N6099 2N6101 2N6103 ~~;,~ ~" JEDEC TO-220AB High-Current, Silicon N-P-N VER.
* Low saturation voltage VCE(satl = 1 V max. at Ic = 4 A (2N6098, 2N6099) = =1 V max. at IC 5 A (2N6100. 2N6101) = =1 V max_ at IC 8 A (2N6102, 2N6103) a VERSAWATT package (molded-silicone plastic) a Maximum safe-area-of-operation curves
* Thermal-cvcle rating curve These RCA types are hometaxial-.
Part Number2N6102 Datasheet
DescriptionSilicon Power Transistor
ManufacturerSavantIC
Overview ·With TO-220 package ·2N6102 type with short pin APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base E. ltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ;IB=0 IC=5A;IB=0.5A IC=16A;IB=3.2A IC=5A ; VCE=4V IC=16A ; VCE=4V VCB=Rated VCBO;IE=0 T.

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