2N6131 Datasheet and Specifications PDF

The 2N6131 is a NPN SILICON TRANSISTOR.

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Part Number2N6131 Datasheet
ManufacturerCentral Semiconductor
Overview Standard Optional Power Transistors TO-220 Case TO-220 TYPE NO. IC (A) MAX 4.0 4.0 4.0 7.0 7.0 7.0 7.0 2N6040 2N6041 2N6042 10 10 10 10 10 16 2N6124 2N6125 2N6126 2N6132 2N6133 2N6134 2N6111 2N6109 . 0 5.0 5.0 TO-220FP Full Pak fT (MHz) MIN 0.8 0.8 0.8 0.8 0.8 0.8 0.8 4.0 4.0 4.0 5.0 5.0 5.0 2.5 2.5 2.5 2.5 2.5 2.5 4.0 4.0 4.0 20 20 20 4.0 4.0 5.0 5.0 5.0 @ IC VCE(SAT) @ IC (A) (V) MAX 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 2.0 2.5 2.5 2.5 0.6 0.6 0.6 1.4 1.4 1.8 3.5 3.5 3.5 2.0 2.0 2.0 1.2 1.2 1..
Part Number2N6131 Datasheet
DescriptionSilicon Power Transistor
ManufacturerSavantIC
Overview ·With TO-220 package ·High power dissipation ·Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS ·Power amplifier and medium speed switching applications PINNING PIN 1 2 3 Base Collector;conne. S Tj=25 unless otherwise specified PARAMETER 2N6129 VCEO(SUS) Collector-emitter sustaining voltage 2N6130 2N6131 2N6129 VCEsat Collector-emitter saturation voltage IC=0.1A ;IB=0 SYMBOL 2N6129 2N6130 2N6131 CONDITIONS MIN 40 60 80 TYP. MAX UNIT V 1.4 2N6130 2N6131 IC=7A;IB=1.2A 1.8 IC=2.5A ; .
Part Number2N6131 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·DC Current Gain- : hFE = 20-100@ IC= 2.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ·Complement to Type 2N6134 ·Minimum Lot-to-Lot variations for robust device performance and rel. B= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.4A VBE(on) Base-Emitter On Voltage IC= 7A; VCE= 4V ICBO Collector Cutoff Current VCB= 80V; IE= 0 ICEO Collector Cutoff Current VCE= 80V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 2.5A ; V.