| Part Number | 2N6314 Datasheet |
|---|---|
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2N4231A, 2N6312 series devices are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching . E=50V (2N4232A, 2N6313) ICEO VCE=70V (2N4233A, 2N6314) ICEV VCE=Rated VCEO, VBE=1.5V ICEV VCE=Rated VCEO, VBE=1.5V, TC=150°C IEBO VEB=5.0V BVCEO IC=100mA, (2N4231A, 2N6312) 40 BVCEO IC=100mA, (2N4232A, 2N6313) 60 BVCEO IC=100mA, (2N4233A, 2N6314) 80 VCE(SAT) IC=1.5A, IB=0.15A VCE(SAT. |
2N6314 Datasheet and Specifications PDF
The 2N6314 is a SILICON TRANSISTORS.
| Part Number | 2N6314 Datasheet |
|---|---|
| Description | (2N6312 - 2N6314) Silicon Power Transistor |
| Manufacturer | SavantIC |
| Overview | ·With TO-66 package ·Low collector saturation voltage ·Low leakage current APPLICATIONS ·Designed for general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collecto. ification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6312 VCEO(SUS) Collector-emitter sustaining voltage 2N6313 2N6314 VCEsat-1 VCEsat-2 VCEsat-3 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturatio. |