| Part Number | 2N6425 Datasheet |
|---|---|
| Manufacturer | Seme LAB |
| Overview | 2N6425 Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. 11.94 (0.470) 12.7. tion furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: h. |
2N6425 Datasheet and Specifications PDF
The 2N6425 is a Bipolar PNP Device.
Key Specifications
| Pins | 0 |
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| Part Number | 2N6425 Datasheet |
|---|---|
| Description | PNP Silicon Power Transistor |
| Manufacturer | Central Semiconductor |
| Overview | 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 . . |
| Part Number | 2N6425 Datasheet |
|---|---|
| Description | Silicon PNP Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : VCEO=-300V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications AB. n Voltage IC= -0.25A; IB=-0.025A VBE(on) Base-Emitter On Voltage IC= -0.1A; VCE=-10V hFE DC Current Gain IC=-0.1A; VCE=-20V MIN TYP. MAX UNIT -300 V -100 uA -0.25 mA -2.5 V -1.0 V 35 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time with. |