2N6492 Datasheet and Specifications PDF

The 2N6492 is a Silicon Power Transistor.

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Part Number2N6492 Datasheet
ManufacturerSavantIC
Overview ·With TO-3 package ·Low collector saturation voltage ·High DC current gain ·DARLINGTON APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications PINNING PIN 1 2 3 Base Emit. NS MIN TYP. MAX UNIT SYMBOL VCEO(SUS) VCEsat VBEsat VBE ICEO ICEX IEBO hFE-1 hFE-2 Collector-emitter sustaining voltage IC=0.1 A ;IB=0 IC=10A ;IB=100mA IC=10A ;IB=100mA IC=3A ; VCE=4V VCE=40V; IB=0 VCE=55V; VBE(off)=-1.5V VEB=5V; IC=0 IC=3A ; VCE=4V IC=15A ; VCE=4V 45 V Collector-emitter satu.
Part Number2N6492 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·High DC current gain : hFE= 500(Min)@ IC= 3A ·With TO-3 package ·Low collector saturation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation A. ER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=10A; IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC=10A; IB= 0.1A VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 4V IEBO Emitter Cutoff Current VEB= 5V; IC= 0.