2N6530 Datasheet and Specifications PDF

The 2N6530 is a 8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS.

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Part Number2N6530 Datasheet
ManufacturerUnknown Manufacturer
Overview . .
Part Number2N6530 Datasheet
DescriptionNPN POWER TRANSISTOR
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR 2N6530 Series are NPN silicon Darlington transistors designed for power applications requiring extremely high gain. MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Colle. 5.0V, TC=125°C IEBO VEB=5.0V 5.0 5.0 5.0 BVCER IC=200mA, RBE=100Ω 80 100 100 BVCEO IC=200mA 80 100 100 BVCEV IC=200mA, VEB=1.5V 80 100 100 VCE(SAT) IC=3.0A, IB=6.0mA 3.0 VCE(SAT) IC=5.0A, IB=10mA 2.0 2.0 VCE(SAT) IC=8.0A, IB=80mA 3.0 3.0 3.0 VBE(ON) VCE=3.0V, IC=3.0A 2.8.
Part Number2N6530 Datasheet
DescriptionSilicon Power Transistor
ManufacturerSavantIC
Overview ·With TO-220 package ·DARLINGTON ·High DC current gain APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounti. 5 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2N6530 SYMBOL MAX UNIT VCEO(SUS) VCEsat-1 VCEsat-2 VBE-1 VBE-2 ICEV ICEO IEBO hFE-1 hFE-2 VF Collector-emitter sustaining voltage IC=0.2A ; IB=0 IC=5A ;IB=10mA IC=8A; IB=80mA IC=5A ; VCE=3V IC=8A ; VCE=3V VCE=80V; VBE=-1.5V TC=125 VCE.