2N6717 Datasheet
2N6717 Datasheet (Zetex Semiconductors)
Zetex Semiconductors
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt 2N6716 2N6717 2N6718 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Co.
* 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt 2N6716 2N6717 2N6718 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb= 25°C SYMBOL 2N6716 VCBO VCEO .
2N6717 Datasheet (Central Semiconductor)
Central Semiconductor
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .
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2N6717 Datasheet (SeCoS Halbleitertechnologie GmbH)
SeCoS Halbleitertechnologie GmbH
Elektronische Bauelemente 2N6716 / 2N6717 / 2N6718 1A , 100V NPN Plastic Encapsulated Transistor FEATURES High Voltage：VCEO = 100V Gain of 20 @ IC = 0.5A RoHS Compliant Product A suffix of “-C”.
* High Voltage：VCEO = 100V
* Gain of 20 @ IC = 0.5A
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
Collector
*
Base
Emitter
TO-92
GH
J AD
B K
E CF
Emitter Base
*Collector
REF.
A B C D E F G H J K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.8.
2N6717 Datasheet (GE)
GE
NPN POWER TRANSISTORS COMPLEMENTARY TO THE 2N6728, 29/92GU55, 56 SERIES 92GU05,06 2N6716,17 60-80 VOLTS 2 AMPS, 1.2 WATTS Applications: • High VCE ratings: 92GU05 = 60V min. VCEO 92GU06 = 80V min. V.
.e., that power which can be dissipated with the device installed in a typical manner on a printed circuit board with total copper run area equal to 1.0 in.2 minimum. 831 electrical characteristics (TA = 25° C) (unless otherwise specified) CHARACTERISTIC I SYMBOL I MIN TYP off characteristics.