| Part Number | 2N6790 |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
2N6790
Data Sheet December 2001
3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET
The 2N6790 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such .
* 3.5A, 200V * rDS(ON) = 0.800Ω * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Majority Carrier Device Ordering Information PART NUMBER 2N6790 PACKAGE TO-205AF BRAND 2N6790 * Related Literature - TB334 “Guidelines for Sol. |
2N6790 Datasheet
The 2N6790 is a N-CHANNEL Power MOSFET.
| Part Number | 2N6790 |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Seme LAB |
| Overview | . . |
| Part Number | 2N6790 |
|---|---|
| Description | N-CHANNEL MOSFET |
| Manufacturer | Microsemi |
| Overview |
These 2N6788 and 2N6790 devices are military qualified up to a JANTXV level for highreliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regul.
* JEDEC registered 2N6788 and 2N6790 number. * JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/555. * RoHS compliant versions available (commercial grade only). * High frequency operation. * Lightweight package. * ESD rated to class 1A. APPLICATIONS / BENEFITS MAXIMUM RATING. |