| Part Number | 2N7008 Datasheet |
|---|---|
| Manufacturer | Supertex Inc |
| Overview |
The Supertex 2N7008 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a d.
* *Free from secondary breakdown * *Low power drive requirement * *Ease of paralleling * *Low CISS and fast switching speeds * *Excellent thermal stability * *Integral source-drain diode * *High input impedance and high gain Applications * *Motor controls * * Converters * * Amplifiers * * Switches * *Power supp. |
2N7008 Datasheet and Specifications PDF
The 2N7008 is a N-Channel Enhancement-Mode Vertical DMOS FETs.
Key Specifications
| Package | TO-92-3 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 5.334 mm |
| Length | 5.21 mm |
| Width | 4.19 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | 2N7008 Datasheet |
|---|---|
| Description | N-Channel Enhancement-Mode MOS Transistor |
| Manufacturer | Siliconix |
| Overview | 2N7008 N-Channel Enhancement-Mode MOS Transistor ~SilicDnix ~ incorporated PRODUCT SUMMARY V(BR)OSS rOS(ON) 10 (V) (.0) (A) 60 7.5 0.15 PACKAGE TO-92 Performance Curves: VNDS06 (See Sectio. n-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-Resistance3 Drain-Source On-Voltage 3 ~~~:6~nductance3 Common Source Output Conductance3,4 DYNAMIC V(BR)DSS VaS(th) lass IDSS ID(ON) rDS(ON) VDS(ON) gfs gos . |
| Part Number | 2N7008 Datasheet |
|---|---|
| Description | Small-Signal Field Effect Transistor |
| Manufacturer | onsemi |
| Overview |
2N7008
Small−Signal Field Effect Transistor
N−Channel Enhancement Mode Silicon Gate TMOS
…are designed for high voltage, high speed applications such as switching regulators, converters, solenoid, an.
S FET, RDS(ON) = 7.5 W, 60 V
D
G S MARKING DIAGRAM
TO *92 (TO *226) CASE 29 © Semiconductor Components Industries, LLC, 2003 1 October, 2003 * Rev. 0 Publication Order Number: 2N7008/D 2N7008 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristics OFF CHARACTERISTICS Drai. |
| Part Number | 2N7008 Datasheet |
|---|---|
| Description | N-Channel Vertical DMOS FET |
| Manufacturer | Microchip Technology |
| Overview |
The 2N7008 is a low-threshold Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device wi.
* Free from Secondary Breakdown * Low Power Drive Requirement * Ease of Paralleling * Low CISS and Fast Switching Speeds * Excellent Thermal Stability * Integral Source-Drain Diode * High Input Impedance and High Gain Applications * Motor Controls * Converters * Amplifiers * Switches * Power Supply . |