2SA1010 Datasheet

The 2SA1010 is a SILICON POWER TRANSISTOR.

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Part Number2SA1010
ManufacturerNEC
Overview of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these cir.
* Low collector saturation voltage
* Fast switching speed
* Complementary transistor: 2SC2334 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power .
Part Number2SA1010
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·Low Collector Saturation Voltage ·Fast Switching Speed ·Complement to Type 2SC2334 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Developed for hig. RACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -5.0A ; IB= -0.5A, L=1mH VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A VBE(sat) Base-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A ICBO Collec.
Part Number2SA1010
DescriptionSilicon POwer Transistors
ManufacturerSavantIC
Overview ·With TO-220 package ·Complement to type 2SC2334 ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Switching regulators ·DC/DC converters ·High frequency power amplifiers PINNING P. llector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=-5.0A ,IB=-0.5A,L=1mH IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-100V; IE=0 VEB=-5V; IC=.