| Part Number | 2SA1011 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Typ.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min.) ·Complement to Type 2SC2344 ·Minimum Lot-to-Lot variations for robus. CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ -160 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -180 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -10mA; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -. |
2SA1011 Datasheet and Specifications PDF
The 2SA1011 is a POWER TRANSISTOR.
| Part Number | 2SA1011 Datasheet |
|---|---|
| Description | PNP/NPN Epitaxial Planar Silicon Transistors |
| Manufacturer | SANYO |
| Overview |
Ordering number:ENN544G
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1011/2SC2344
High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications
Package Dimensions
unit:mm 2010C
[2SA101.
D 60 to 120
Symbol ICBO IEBO hFE fT Cob VBE
E 100 to 200
Conditions VCB=( *)120V, IE=0 VEB=( *)4V, IC=0 VCE=( *)5V, IC=( *)300mA VCE=( *)10V, IC=( *)50mA VCB=( *)10V, f=1MHz VCE=( *)5V, IC=( *)10mA Ratings min typ max ( *)10 ( *)10 60* 100 (30) 23 ( *)1.5 200* Unit µA µA MHz pF pF V * : The 2SA1011/2SC2344. |