| Part Number | 2SA1064 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2488 ·Minimum Lot-to-Lot variations for robust device performan. CE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A VBE(on) Base-Emitter On Voltage IC= -8A; VCE= -5V ICBO Collector Cutoff Current VCB= -70V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -5V hFE-2 DC Current Gain IC= -8A; VCE= -5V . |
2SA1064 Datasheet and Specifications PDF
The 2SA1064 is a POWER TRANSISTOR.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | 2SA1064 Datasheet |
|---|---|
| Description | Silicon POwer Transistors |
| Manufacturer | SavantIC |
| Overview | ·With TO-3 package ·Low collector saturation voltage ·Complement to type 2SC2488 ·High transition frequency APPLICATIONS ·For audio frequency amplifier and high power amplifier applications PINNING(se. er saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-0.1A ;IB=0 IC=-8A ;IB=-0.8A IC=-8A;VCE=-5V VCB=-70V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-8A ; VCE=-5V IC=-0.5A ; VCE=-5V 40 20 MIN -. |